Methods for forming a semiconductor arrangement with structures having different heights

ABSTRACT

Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.

BACKGROUND

A semiconductor arrangement comprises one or more devices, such asFinFET transistors, formed over a substrate. In an example, thesemiconductor arrangement comprises an overlay region. The overlayregion comprises one or more overlay alignment marks used duringsemiconductor fabrication for alignment purposes. In an example, the oneor more overlay alignment marks are used to align one or more masks withone or more layers during patterning, such as during lithography. Anetching process is performed to expose such overlay alignment marks orto remove material from a layer of the semiconductor arrangement to formstructures, such as polysilicon gate structures or inter layerdielectric (ILD) structures. Because overlay alignment marks are exposedand structures are formed by the etching process, the overlay alignmentmarks and the structures have similar heights, which leads to overlayalignment mark visibility issues where heights of such overlay alignmentmarks are constrained to heights of the structures.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow diagram illustrating a method of forming asemiconductor arrangement, according to some embodiments.

FIG. 2 is an illustration of a substrate comprising a target region anda second region, according to some embodiments.

FIG. 3 is an illustration of forming one or more STI structures into asubstrate, according to some embodiments.

FIG. 4 is an illustration of forming a first layer over a substrate,according to some embodiments.

FIG. 5 is an illustration of forming a layer over a substrate, accordingto some embodiments.

FIG. 6 is an illustration of forming a photoresist mask, according tosome embodiments.

FIG. 7 is an illustration of performing a first etch, according to someembodiments.

FIG. 8 is an illustration of forming a photoresist layer, according tosome embodiments.

FIG. 9 is an illustration of forming a second photoresist mask,according to some embodiments.

FIG. 10 is an illustration of performing a second etch, according tosome embodiments.

FIG. 11 is an illustration of a semiconductor arrangement, according tosome embodiments.

DETAILED DESCRIPTION

The claimed subject matter is now described with reference to thedrawings, wherein like reference numerals are generally used to refer tolike elements throughout. In the following description, for purposes ofexplanation, numerous specific details are set forth in order to providean understanding of the claimed subject matter. It is evident, however,that the claimed subject matter can be practiced without these specificdetails. In other instances, structures and devices are illustrated inblock diagram form in order to facilitate describing the claimed subjectmatter.

One or more semiconductor arrangements, and one or more techniques forforming such semiconductor arrangements are provided herein. In anembodiment, a semiconductor arrangement comprises a layer, such as apoly layer or an inter layer dielectric (ILD) layer. A target region ofthe layer, such as an overlay region, and a second region of the layer,such as an active region, are defined. A photoresist mask is used duringan etching process to selectively etch the target region but inhibitetching of the active region. In this way, the etched layer within thetarget region has a first layer height that is less than a second layerheight of the layer within the active region. A first structure, such asa first poly structure or a first ILD structure, is formed from theetched layer within the target region. A second structure, such as asecond poly structure or a second ILD structure, is formed from thelayer within the second region. The first structure has a first heightthat is less than a second height of the second structure. In anembodiment, the first structure comprises a first overlay alignmentmark. In an embodiment, the second structure comprises a gate structureof a FinFET transistor. In this way, the first overlay alignment mark isshorter than the gate structure, which improves overlay alignment markvisibility during fabrication, according to some embodiments.

A method 100 of forming a semiconductor arrangement is illustrated inFIG. 1, and one or more semiconductor arrangements formed by such amethodology are illustrated in FIGS. 2-11. A semiconductor arrangement208 comprises a substrate 202, as illustrated in FIG. 2. In anembodiment of front end of line processing, the substrate 202 comprisesa silicon substrate. In an embodiment of back end of line processing,the substrate 202 comprises a metal layer. The semiconductor arrangement208 comprises a target region 204 and a second region 206. In anembodiment, the target region 204 comprises an overlay region withinwhich one or more overlay alignment marks are to be formed for alignmentpurposes during semiconductor fabrication. According to someembodiments, the target region 204 corresponds to any region, such as anactive region, a dummy region, etc. In an embodiment, the second regioncomprises an active region within which one or more gate structures,semiconductor fins, metal structures, or other active device portionsare to be formed during semiconductor fabrication. According to someembodiments, the second region 206 corresponds to any region, such as adummy region, an overlay region, etc.

In an embodiment, one or more STI structures are formed into thesubstrate 202, as illustrated in FIG. 3. In an embodiment, a first STIstructure 302 and a second STI structure 304 are formed within thetarget region 204. In an embodiment, a third STI structure 306 and afourth STI structure 308 are formed within the second region 206.

In an embodiment, a first layer 402 is formed over the substrate 202, asillustrated in FIG. 4. In an embodiment, the first layer 402 comprises agate dielectric material. In an embodiment, the first layer 402 is notformed over the STI structures. In an embodiment, the first layer 402 isformed over the STI structures as well, but is subsequently removed fromthe STI structures such as by etching.

At 102, a layer 502 is formed over the substrate 202, as illustrated inFIG. 5. In an embodiment, the layer 502 is formed over the first layer402 and the STI structures. The layer 502 comprises a target regionlayer 502 a formed within the target region 204. The layer 502 comprisesa second region layer 502 b formed within the second region 206. In anembodiment of front end of line processing, the layer 502 comprises apoly layer used to form gate structures from polysilicon. In anembodiment, the layer 502 is formed using a poly (PO) film depositionprocessing. In an embodiment of back end of line processing, the layer502 comprises a metal layer used for connectivity between devices.

At 104, a photoresist mask 602 is formed over the layer 502, asillustrated in FIG. 6. The photoresist mask 602 comprises an open region602 a overlaying the target region layer 502 a. The open region 602 aallows an etching process to remove a portion of the target region layer502 a to reduce a height or thickness of the target region layer 502 ato an etched height or thickness that is less than a height or thicknessof the second region layer 502 b. The photoresist mask 602 comprises aprotection region 602 b overlaying the second region layer 502 b. Theprotection region 602 b inhibits the etching processing from affectingthe second region layer 502 b. in an embodiment, a photoresist layer ispatterned to form the photoresist mask 602, such as by removing aportion of the photoresist layer to establish the open region 602 a.

At 106, a first etch 702 is performed through the open region 602 a toremove a portion of the target region layer 502 a resulting in etchedtarget region layer 502 c, as illustrated in FIG. 7. The protectionregion 602 b inhibits the first etch 702 from affecting the secondregion layer 502 b. The etched target region layer 502 c has an etchedheight or thickness that is less than a height or thickness of thesecond region layer 502 b. In an embodiment where the layer 502comprises poly, the first etch 702 comprises a poly (PO) etch thatremoves the portion of the target region layer 502 a resulting in theetched target region layer 502 c.

In an embodiment, one or more photoresist layers, such as photoresistlayer 802, are formed over the layer 502, as illustrated in FIG. 8. Inan embodiment, a second photoresist mask is formed over the layer 502,such as over the photoresist layer 802, as illustrated in FIG. 9. In anembodiment, a photoresist layer is patterned to form the secondphotoresist mask. The second photoresist mask comprises one or morephotoresist mask portions that are used to define structures that are tobe formed from the layer 502. In an embodiment, the second photoresistmask comprises a first photoresist mask portion 902 used to define afirst structure, such as an overlay alignment mark, that is to be formedfrom the etched target region layer 502 c. The second photoresist maskcomprises a second photoresist mask portion 904 used to define a secondstructure, such as an overlay alignment mark, that is to be formed fromthe etched target region layer 502 c. The second photoresist maskcomprises a third photoresist mask portion 906 used to define a thirdstructure, such as a gate structure or an ILD structure, that is to beformed from the second region layer 502 b. The second photoresist maskcomprises a fourth photoresist mask portion 908 used to define a fourthstructure, such as a gate structure or an ILD structure, that is to beformed from the second region layer 502 b.

At 108, one or more structures are formed within the target region 204and within the second region 206, as illustrated in FIG. 10. In anembodiment, a second etch 1002 is performed to remove a portion of theetched target region layer 502 c and a portion of the second regionlayer 502 b. The first photoresist mask portion 902 inhibits the secondetch 1002 from affecting a first portion of the etched target regionlayer 502 c resulting in a first structure 1004. The second photoresistmask portion 904 inhibits the second etch 1002 from affecting a secondportion of the etched target region layer 502 c resulting in a secondstructure 1006. The third photoresist mask portion 906 inhibits thesecond etch 1002 from affecting a first portion of the second regionlayer 502 b resulting in a third structure 1008. The fourth photoresistmask portion 908 inhibits the second etch 1002 from affecting a secondportion of the second region layer 502 b resulting in a fourth structure1010. At least one of a first height 1012 of the first structure 1004 ora second height 1014 of the second structure 1006 are less than at leastone of a third height 1016 of the third structure 1008 or a fourthheight 1018 of the fourth structure 1010. In this way, one or morestructures, such as overlay alignment marks, are formed within thetarget region 204 and have heights that are less than heights of one ormore structures, such as gate structures or ILD structures, formedwithin the second region 206 adjacent to the target region 204. In anembodiment, the pattern of the first photoresist mask portion 902,second photoresist mask portion 904, third photoresist mask portion 906and fourth photoresist mask portion 908, etc. of the second photoresistmask is transferred or imparted to the one or more underlayingphotoresist layers, such as photoresist layer 802, such as through atleast one of etching or lithographic processes. The first structure1004, second structure 1006, third structure 1008 and fourth structure1010, etc. are formed based upon the transferred patterns. The firststructure 1004, second structure 1006, third structure 1008 and fourthstructure 1010, etc. are thus formed based upon the first photoresistmask portion 902, second photoresist mask portion 904, third photoresistmask portion 906 and fourth photoresist mask portion 908, etc., albeitindirectly.

FIG. 11 illustrates a semiconductor arrangement 1124 that, according tosome embodiments, comprises one or more overlay marks having heightsthat are less than heights of one or more ILD structures. Thesemiconductor arrangement 1124 comprises an overlay region 1102 and anactive region 1104. The semiconductor arrangement 1124 comprises one ormore metal layers 1114. The one or more metal layers 1114 comprise oneor more metal portions, such as a metal (1) layer portion 1114 a, ametal (2) layer portion 1114 b, a first metal portion 1114 c, a secondmetal portion 1114 d, a metal via portion 1114 e connecting the metal(1) layer portion 1114 a to the metal (2) layer portion 1114 b, or othermetal portions. The semiconductor arrangement 1124 comprises a first ILDlayer 1116.

The semiconductor arrangement 1124 comprises one or more ILD structures,such as a first ILD structure 1106 and a second ILD structure 1108formed within the overlay region 1102, and a third ILD structure 1110and a fourth ILD structure 1112 formed within the active region 1104.The second ILD structure 1108 has a height 1118 that is less than atleast one of a height 1120 of the third ILD structure 1110 or a height1122 of the fourth ILD structure 1112. In an embodiment, the first ILDstructure 1106 and the second ILD structure 1108 are formed as overlayalignment marks within the overlay region 1102, and have heights thatare less than the heights of the ILD structures within the active region1104.

In an embodiment of forming a semiconductor arrangement, a filmdeposition is performed to form a first layer, such as a poly layer oran ILD layer, over a substrate such as a silicon substrate or a metallayer. The first layer comprises a target region layer formed within atarget region, such as an overlay region, of the semiconductorarrangement. The first layer comprises a second region layer formedwithin a second region, such as a device region associated with one ormore FinFET devices, of the semiconductor arrangement. A bottomantireflective coating is applied to the first layer. A photoresistcoating is applied over the bottom antireflective coating. A mask isformed over the photoresist coating. The mask comprises an open regionoverlaying the target region and a protection region overlaying thesecond region. A first lithography process is performed to remove aportion of the target region layer resulting in an etched target regionlayer having a height that is less than a height of the second regionlayer because the protection region of the mask inhibits the firstlithography process from affecting the second region layer. Aphotoresist removal processing is performed to remove the photoresistcoating. A second bottom antireflective coating is applied to the firstlayer after the first lithograph process. A second photoresist coatingis applied over the second bottom antireflective coating. A second mask,defining one or more structures within the target region and one or morestructures within the second region, is applied. In an embodiment apattern is transferred from the second mask to the second photoresistcoating. A second lithography process is performed to form a firststructure, within the target region, from the etched target regionlayer. The second lithography process is performed to form a secondstructure, within the second region, from the second region layer. Thefirst structure has a height that is less than a height of the secondstructure. Critical dimension (CD) and overlay measurements areperformed with respect to the target layer, such as using the firststructure as an overlay alignment mark. A film etch is performed toremove the second photoresist coating.

According to an aspect of the instant disclosure, a semiconductorarrangement is provided. The semiconductor arrangement comprises atarget region. The target region comprises an overlay region. The targetregion comprises a first poly structure having a first height. Thesemiconductor arrangement comprises a second region. The second regioncomprises a second poly structure having a second height that is greaterthan the first height.

According to an aspect of the instant disclosure, a semiconductorarrangement is provided. The semiconductor arrangement comprises anoverlay region. The overlay region comprises a first structure having afirst height. The semiconductor arrangement comprises a second region.The second region comprises an active region. The second regioncomprises a second structure having a second height that is greater thanthe first height.

According to an aspect of the instant disclosure, a method for forming asemiconductor arrangement is provided. The method comprises forming alayer over a substrate. A photoresist mask is formed over the layer. Thephotoresist mask comprises an open region overlaying a target region ofthe layer. The photoresist mask comprises a protection region overlayinga second region of the layer. A first etch is performed through the openregion to remove a portion of the target region. The protection regioninhibits the first etch from affecting the second region. A firststructure is formed within the target region and a second structure isformed within the second region. The second structure has a secondheight greater than a first height of the first structure.

Although the subject matter has been described in language specific tostructural features or methodological acts, it is to be understood thatthe subject matter of the appended claims is not necessarily limited tothe specific features or acts described above. Rather, the specificfeatures and acts described above are disclosed as embodiment forms ofimplementing at least some of the claims.

Various operations of embodiments are provided herein. The order inwhich some or all of the operations are described should not beconstrued to imply that these operations are necessarily orderdependent. Alternative ordering will be appreciated given the benefit ofthis description. Further, it will be understood that not all operationsare necessarily present in each embodiment provided herein. Also, itwill be understood that not all operations are necessary in someembodiments.

It will be appreciated that layers, features, elements, etc. depictedherein are illustrated with particular dimensions relative to oneanother, such as structural dimensions or orientations, for example, forpurposes of simplicity and ease of understanding and that actualdimensions of the same differ substantially from that illustratedherein, in some embodiments. Additionally, a variety of techniques existfor forming the layers features, elements, etc. mentioned herein, suchas etching techniques, implanting techniques, doping techniques, spin-ontechniques, sputtering techniques such as magnetron or ion beamsputtering, growth techniques, such as thermal growth or depositiontechniques such as chemical vapor deposition (CVD), physical vapordeposition (PVD), plasma enhanced chemical vapor deposition (PECVD), oratomic layer deposition (ALD), for example.

Further, unless specified otherwise, “first,” “second,” or the like arenot intended to imply a temporal aspect, a spatial aspect, an ordering,etc. Rather, such terms are merely used as identifiers, names, etc. forfeatures, elements, items, etc. For example, a first channel and asecond channel generally correspond to channel A and channel B or twodifferent or two identical channels or the same channel.

Moreover, “exemplary” is used herein to mean serving as an example,instance, illustration, etc., and not necessarily as advantageous. Asused in this application, “or” is intended to mean an inclusive “or”rather than an exclusive “or”. In addition, “a” and “an” as used in thisapplication are generally to be construed to mean “one or more” unlessspecified otherwise or clear from context to be directed to a singularform. Also, at least one of A and B or the like generally means A or Bor both A and B. Furthermore, to the extent that “includes”, “having”,“has”, “with”, or variants thereof are used, such terms are intended tobe inclusive in a manner similar to “comprising”.

Also, although the disclosure has been shown and described with respectto one or more implementations, equivalent alterations and modificationswill occur to others skilled in the art based upon a reading andunderstanding of this specification and the annexed drawings. Thedisclosure includes all such modifications and alterations and islimited only by the scope of the following claims. In particular regardto the various functions performed by the above described components(e.g., elements, resources, etc.), the terms used to describe suchcomponents are intended to correspond, unless otherwise indicated, toany component which performs the specified function of the describedcomponent (e.g., that is functionally equivalent), even though notstructurally equivalent to the disclosed structure. In addition, while aparticular feature of the disclosure may have been disclosed withrespect to only one of several implementations, such feature may becombined with one or more other features of the other implementations asmay be desired and advantageous for any given or particular application.

What is claimed is:
 1. A method for forming a semiconductor arrangement,comprising: forming a layer over a substrate, the layer comprising apolysilicon; forming a photoresist mask over the layer, the photoresistmask comprising an open region overlaying a target region of the layer,the photoresist mask comprising a protection region overlaying a secondregion of the layer; performing a first etch through the open region toremove a portion of the target region of the layer, the protectionregion inhibiting the first etch from affecting the second region of thelayer; forming a first photoresist layer over the layer after theperforming a first etch; forming a second photoresist layer over thefirst photoresist layer; patterning the second photoresist layer to forma second photoresist mask comprising a first photoresist mask portionand a second photoresist mask portion; and forming a first structurewithin the target region of the layer and a second structure within thesecond region of the layer, the first structure formed under the firstphotoresist mask portion and the second structure formed under thesecond photoresist mask portion, the second structure having a secondheight greater than a first height of the first structure.
 2. The methodof claim 1, the forming a photoresist mask comprising: positioning theopen region of the photoresist mask over an overlay region of the targetregion.
 3. The method of claim 1, the forming a photoresist maskcomprising: positioning the protection region of the photoresist maskover an active region of the second region, the active region adjacentto the target region.
 4. The method of claim 1, forming a firststructure within the target region and a second structure within thesecond region comprising: performing a second etch to remove a firstportion of the target region of the layer, and to remove a secondportion of the second region of the layer.
 5. The method of claim 1,comprising: forming a shallow trench isolation (STI) structures withinthe substrate prior to the forming a layer over the substrate.
 6. Themethod of claim 1, the forming a first structure within the targetregion of the layer and a second structure within the second region ofthe layer comprising: performing a second etch using the secondphotoresist mask to form the first structure and the second structure.7. A method for forming a semiconductor arrangement, comprising: forminga layer over a substrate; forming a photoresist mask over the layer, thephotoresist mask comprising an open region and a protective region;performing a first etch whereby etchant is applied to a target region ofthe layer by way of the open region and is not applied to a secondregion of the layer due to the protective region; forming a firstphotoresist layer over the layer after the performing a first etch;forming a second photoresist layer over the first photoresist layer;patterning the second photoresist layer to form a second photoresistmask comprising a first photoresist mask portion and a secondphotoresist mask portion; and forming a first structure within thetarget region of the layer and forming a second structure within thesecond region of the layer, the second structure having a second heightgreater than a first height of the first structure due to the firstetch, the first structure formed below the first photoresist maskportion and the second structure formed below the second photoresistmask portion.
 8. The method of claim 7, comprising: forming one or moreshallow trench isolation (STI) structures within the substrate prior tothe forming a layer over a substrate.
 9. The method of claim 7,comprising: forming a dielectric layer over the substrate.
 10. Themethod of claim 9, the forming a layer over a substrate comprising:forming the layer over the dielectric layer.
 11. The method of claim 7,the layer comprising a polysilicon.
 12. The method of claim 7,comprising: forming one or more shallow trench isolation (STI)structures within the substrate; and forming a dielectric layer over thesubstrate, wherein the forming a layer over a substrate comprises:forming the layer over the one or more STI structures and over thedielectric layer.
 13. The method of claim 7, the performing a first etchcomprising removing less than all material within the target region ofthe layer.
 14. The method of claim 7, the first photoresist mask portiondefining an overlay alignment mark and the second photoresist maskportion defining a gate structure.
 15. The method of claim 14, the firststructure comprising the overlay alignment mark and the second structurecomprising the gate structure.
 16. The method of claim 7, the forming afirst structure within the target region of the layer and forming asecond structure within the second region of the layer comprising:performing a second etch using the second photoresist mask to form thefirst structure and the second structure.
 17. A method for forming asemiconductor arrangement, comprising: forming one or more shallowtrench isolation (STI) structures within a substrate; forming adielectric layer over the substrate; forming a polysilicon layer overthe one or more STI structures and the dielectric layer; forming a firstphotoresist layer over the polysilicon layer; patterning the firstphotoresist layer to form a first photoresist mask, the firstphotoresist mask comprising an open region and a protective region;performing a first etch whereby etchant is applied to a target region ofthe polysilicon layer by way of the open region and is not applied to asecond region of the polysilicon layer due to the protective region toform an etched polysilicon layer; forming a second photoresist layerover the etched polysilicon layer; patterning the second photoresistlayer to form a second photoresist mask comprising a first photoresistmask portion for defining an overlay alignment mark and a secondphotoresist mask portion for defining a gate structure; and performing asecond etch using the second photoresist mask to form the overlayalignment mark and the gate structure within the etched polysiliconlayer.
 18. The method of claim 17, comprising: forming a thirdphotoresist layer over the etched polysilicon layer, the forming asecond photoresist layer comprising: forming the second photoresistlayer over the third photoresist layer.
 19. The method of claim 17, theperforming a second etch comprising: further etching the target regionof the polysilicon layer.
 20. The method of claim 19, the performing asecond etch comprising: etching the second region of the polysiliconlayer.